CRS01 2002-09-02 1 toshiba schottky barrier rectifier schottky barrier type CRS01 high speed rectifier applications low forward voltage: v fm = 0.37 v @ i fm = 0.7 a average forward current: i f (av) = 1.0 a repetitive peak reverse voltage: v rrm = 30 v suitable for compact assembly due to small surface-mount package ?s ? flat tm ? (toshiba package name) maximum ratings (ta 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 30 v average forward current i f(av) 1.0 (note) a 20 (50 hz) peak one cycle surge forward current (non-repetitive) i fsm 22 (60 hz) a junction temperature t j 40~125 c storage temperature t stg 40~150 c note: t ? 98c: rectangular waveform ( 180c), v r 15 v electrical characteristics (ta 25c) characteristics symbol test condition typ. max unit v fm (1) i fm 0.1 a 0.25 v fm (2) i fm 0.7 a 0.33 0.37 peak forward voltage v fm (3) i fm 1.0 a 0.36 v repetitive peak reverse current i rrm v rrm 30 v 1.5 ma junction capacitance c j v r 10 v, f 1.0 mhz 40.0 pf device mounted on a ceramic board (soldering land: 2 mm 2 mm) 70 thermal resistance (junction to ambient) r th (j-a) device mounted on a glass-epoxy board (soldering land: 6 mm 6 mm) 140 c/w thermal resistance (junction to lead) r th (j- ? ) 20 c/w unit: mm jedec D jeita D toshiba 3-2a1a weight: 0.013 g (typ.)
CRS01 2002-09-02 2 marking following indicates the date of manufacture standard soldering pad handling precaution schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. this current leakage and improper operating temperature or voltage may cause thermal runaway. please take forward and reverse loss into consideration when you design. 0 1 2 3 4 5 6 7 8 9 2.8 1.2 1.2 unit: mm cathode mark type code lot no. s1 month of manufac- ture january to december are denoted by letter a to l respectivel y . year of manufac- ture last decimal digit of the year of manufacture
CRS01 2002-09-02 3 transient thermal impedance r th (j-a) (c/w) maximum allowable lead temperature t ? max (c) instantaneous forward voltage v f (v) i f ? v f instantaneous forward current i f (a) average forward current i f (av) (a) p f (av) ? i f (av) average forward power dissipation p f (av) (w) average forward current i f (av) (a) ta m ax ? i f (av) ceramic substrate (substrate size: 50 mm 50 mm) maximum allowable temperature ta m a x ( c ) average forward current i f (av) (a) t ? max ? i f (av) time t (s) r th (j-a) ? t 0 0.2 0.1 1 10 0.4 0.6 0.8 1.0 1.2 25c t j 125c 0 0 40 0.2 0.6 0.8 1.0 1.4 1.6 20 60 120 100 0.4 1.2 80 180c dc 360 0 rectangular waveform v r 15 v i f (av) conduction angle device mounted on a ceramic board: soldering land: 2 mm 2 mm device mounted on a glass-epoxy board: soldering land: 6 mm 6 mm 1 10 1000 10000 0.001 0.01 0.1 100 1 10 100 0 0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2 60 120 180 dc 360 0 rectangular waveform conduction angle 0.6 0.3 0 0.2 0.1 0.4 0.5 60c 180c dc 120c 360 0 v r 15 v i f (av) rectangular waveform conduction angle 0 0 40 140 0.2 0.6 0.8 1.0 1.4 1.6 20 60 120 100 0.4 1.2 80
CRS01 2002-09-02 4 average reverse power dissipation p r (av) (w) number of cycles surge forward current (non-repetitive) peak surge forward current i fsm (a) reverse voltage v r (v) c j ? v r (typ.) junction capacitance c j (pf) junction temperature t j (c) i r ? t j (typ.) reverse current i r (ma) reverse voltage v r (v) p r (av) ? v r (typ.) 1 100 10 0 8 24 32 4 16 20 28 12 ta 25c f 50 hz 1 10 50 10 100 100 f 1 mhz ta 25c 30 500 300 0 20 120 80 40 60 100 10 0.1 0.01 1 100 140 pulse test v r 30 v 3 v 10 v 5 v 1 v 120 60 180 240 300 0 0 1.5 2.5 30 10 0.5 2.0 5 15 20 25 1.0 dc
CRS01 2002-09-02 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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